Passively Q-Switching Mechanism with Gadolinium Oxide (Gd2O3) Film Based Saturable Absorber

Authors

  • Nur Farhanah Zulkipli Department of Engineering and Built Environment, Tunku Abdul Rahman University of Management and Technology (TAR UMT) Penang Branch, 11200 Tanjong Bungah, Pulau Pinang, Malaysia
  • Beh Chong You Department of Engineering and Built Environment, Tunku Abdul Rahman University of Management and Technology (TAR UMT) Penang Branch, 11200 Tanjong Bungah, Pulau Pinang, Malaysia
  • Teng Howe Cheng Department of Engineering and Built Environment, Tunku Abdul Rahman University of Management and Technology (TAR UMT) Penang Branch, 11200 Tanjong Bungah, Pulau Pinang, Malaysia
  • Rabiatul Adawiyah Md Yusoff Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
  • Ahmad Haziq Aiman Rosol Department of Electronic Systems Engineering, Malaysia–Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Sultan Yahya Petra, 54100 Kuala Lumpur,Malaysia
  • Sulaiman Wadi Harun Photonics Engineering Laboratory, Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia
  • Suziana Omar School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA Cawangan Terengganu Kampus Dungun, 23000 Dungun, Terengganu, Malaysia

DOI:

https://doi.org/10.37934/armne.20.1.4450

Keywords:

Passively Q-switched, gadolinium, saturable absorber (SA)

Abstract

A Q-switched erbium-doped fibre laser (EDFL) was successfully exhibited using gadolinium oxide (Gd2O3) as a saturable absorber (SA). The polyvinyl alcohol (PVA) solution and Gd2O3 powder were combined and the combination was then sonicated for around 6 hours. A micro-film was created by allowing the solution to dry out over the period of 48 hours. The Gd2O3-SA was inserted into an EDFL configuration to produce a steady passively Q-switched pulse train. This made it possible to adjust the pump power of the 980 nm pump to be between 24.58 and 76.75 mW. The operational wavelength of the laser was 1562.9 nm and the repetition rate increased rapidly from 51.9 to 77.1 kHz.

Author Biographies

Nur Farhanah Zulkipli, Department of Engineering and Built Environment, Tunku Abdul Rahman University of Management and Technology (TAR UMT) Penang Branch, 11200 Tanjong Bungah, Pulau Pinang, Malaysia

nurfarhanahz@tarc.edu.my

Beh Chong You, Department of Engineering and Built Environment, Tunku Abdul Rahman University of Management and Technology (TAR UMT) Penang Branch, 11200 Tanjong Bungah, Pulau Pinang, Malaysia

behcy@tarc.edu.my

Teng Howe Cheng, Department of Engineering and Built Environment, Tunku Abdul Rahman University of Management and Technology (TAR UMT) Penang Branch, 11200 Tanjong Bungah, Pulau Pinang, Malaysia

tenghc@tarc.edu.my

Rabiatul Adawiyah Md Yusoff, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia

r.addayusoff92@gmail.com

Ahmad Haziq Aiman Rosol, Department of Electronic Systems Engineering, Malaysia–Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Sultan Yahya Petra, 54100 Kuala Lumpur,Malaysia

ahmadhaziqaiman@utm.my

Sulaiman Wadi Harun, Photonics Engineering Laboratory, Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia

swharun@um.edu.my

Suziana Omar, School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA Cawangan Terengganu Kampus Dungun, 23000 Dungun, Terengganu, Malaysia

suzia5374@uitm.edu.my

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Published

2024-07-10

How to Cite

Nur Farhanah Zulkipli, Beh Chong You, Teng Howe Cheng, Rabiatul Adawiyah Md Yusoff, Ahmad Haziq Aiman Rosol, Sulaiman Wadi Harun, and Suziana Omar. 2024. “Passively Q-Switching Mechanism With Gadolinium Oxide (Gd2O3) Film Based Saturable Absorber”. Journal of Advanced Research in Micro and Nano Engineering 20 (1):44-50. https://doi.org/10.37934/armne.20.1.4450.
صندلی اداری سرور مجازی ایران Decentralized Exchange

Issue

Vol. 20 No. 1: June (2024)

Section

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