Comparative Study of Q-Switched Erbium Doped Fibre Laser with SWCNT-PVA Saturable Absorber of Different Ratios

Authors

  • Ooi Wei Ling Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Jalan Sultan Yahya, 54100 Kuala Lumpur, Malaysia
  • Azura Hamzah Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Jalan Sultan Yahya, 54100 Kuala Lumpur, Malaysia
  • Norliza Mohamed Razak Faculty of Technology and Informatics (RFTI), Universiti Teknologi Malaysia, Jalan Sultan Petra Yahya, 54100 Kuala Lumpur, Malaysia
  • Nur Najahatul Huda School of Electrical, Faculty of Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru, Johor, Malaysia
  • Ahmad Haziq Aiman Rosol Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Jalan Sultan Yahya, 54100 Kuala Lumpur, Malaysia
  • Kawther M. Mustafa Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Jalan Sultan Yahya, 54100 Kuala Lumpur, Malaysia
  • Mahroof Mohamed Mafroos Division of Electrical and Electronic, Telecommunication Engineering Technology, Institute Technology Universiti of Moratuwa, Sri Lanka

DOI:

https://doi.org/10.37934/armne.16.1.85101

Keywords:

Q-switched, erbium doped fibre (EDF), SWCNT-PVA, saturable absorber

Abstract

This paper intends to compare the performance parameters of passive Q-switched erbium-doped fibre laser (EDFL) ring cavity configuration by employing SWCNT-PVA as a saturable absorber (SA). The single-wall carbon nanotube-polyvinyl alcohol (SWCNT-PVA) SA thin film fabricated by drop-casting technique is physically characterised to understand its surface morphology and thickness. The laser diode (LD) characterisation is attained to understand the attributes of LD before inserting the SWCNT-PVA into the ring cavity. The SWCNT-PVA SA of ratios 1:1, 3:2 and 2:3 is inserted into the cavity for analysis and comparison with each other. The pulses obtained from the Q-switched laser show that SWCNT-PVA SA of ratio 2:3 is the best SA as it possesses excellent power related parameters of the highest output power of 3.45 mW and highest pulse energy of 36.12 nJ with its moderate repetition rate of 96.25 kHz and pulse width 4.76 ms. The envisaged laser is presumed to have representational implications throughout fibre optic sensing, biosensors, range finding, and other fields for better possible prospects.

Author Biographies

Ooi Wei Ling, Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Jalan Sultan Yahya, 54100 Kuala Lumpur, Malaysia

weiling1997@graduate.utm.my

Azura Hamzah, Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Jalan Sultan Yahya, 54100 Kuala Lumpur, Malaysia

azurahamzah@utm.my

Norliza Mohamed, Razak Faculty of Technology and Informatics (RFTI), Universiti Teknologi Malaysia, Jalan Sultan Petra Yahya, 54100 Kuala Lumpur, Malaysia

norlizam.kl@utm.my

Nur Najahatul Huda, School of Electrical, Faculty of Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru, Johor, Malaysia

nurnajahatulhuda@utm.my

Ahmad Haziq Aiman Rosol, Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Jalan Sultan Yahya, 54100 Kuala Lumpur, Malaysia

haziqaiman1992@gmail.com

Kawther M. Mustafa, Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, Jalan Sultan Yahya, 54100 Kuala Lumpur, Malaysia

kawthermm@gmail.com

Mahroof Mohamed Mafroos, Division of Electrical and Electronic, Telecommunication Engineering Technology, Institute Technology Universiti of Moratuwa, Sri Lanka

mmmafroos@gmail.com

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Published

2024-03-03

How to Cite

Ooi Wei Ling, Azura Hamzah, Norliza Mohamed, Nur Najahatul Huda, Ahmad Haziq Aiman Rosol, Kawther M. Mustafa, and Mahroof Mohamed Mafroos. 2024. “Comparative Study of Q-Switched Erbium Doped Fibre Laser With SWCNT-PVA Saturable Absorber of Different Ratios”. Journal of Advanced Research in Micro and Nano Engineering 16 (1):85-101. https://doi.org/10.37934/armne.16.1.85101.
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