Effect of Annealing Temperature on CuGaO2 Thin Films Deposited by RF Sputtering Technique

L. M.  Li; M. H.  Abu Bakar; K. A.  Mohamad; S.  Sulaiman; S.  Salleh; A.  Alias

Effect of Annealing Temperature on CuGaO2 Thin Films Deposited by RF Sputtering Technique

Authors

L. M. Li Faculty of Science and Natural Resources, Universiti Malaysia Sabah, 88999, Kota Kinabalu, Sabah
M. H. Abu Bakar Faculty of Science and Natural Resources, Universiti Malaysia Sabah, 88999, Kota Kinabalu, Sabah
K. A. Mohamad Faculty of Engineering, Universiti Malaysia Sabah, 88999 Kota Kinabalu, Sabah
S. Sulaiman Faculty of Engineering, Universiti Malaysia Sabah, 88999 Kota Kinabalu, Sabah
S. Salleh Faculty of Science and Natural Resources, Universiti Malaysia Sabah, 88999, Kota Kinabalu, Sabah
A. Alias Faculty of Science and Natural Resources, Universiti Malaysia Sabah, 88999, Kota Kinabalu, Sabah

Keywords:

RF sputtering, CuGaO2 thin films, annealing temperature, annealing time

Abstract

A transparent p-type thin film CuGaO2 was successfully deposited on the glass substrate by using RF sputtering deposition method and underwent different annealing temperature ranging from 200°C to 500°C and time ranging from 1 to 3 hour. The X-ray diffraction analysis shows (015) plane. The bandgap of the thin film is 3.3eV. The transparency of the thin film is around 70%.

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Published

2020-10-31

How to Cite

Li, . L. M. ., Abu Bakar, M. H. ., Mohamad, K. A. ., Sulaiman, S. ., Salleh, . S. ., & Alias, . A. . (2020). Effect of Annealing Temperature on CuGaO2 Thin Films Deposited by RF Sputtering Technique. Journal of Advanced Research in Applied Mechanics, 14(1), 12–17. Retrieved from https://akademiabaru.com/submit/index.php/aram/article/view/1739